Paper Title:
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
  Abstract

In this paper, we present first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from AIXTRON with a capability of processing 10x100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 10x100mm runs will be shown and compared to results of the 6x100mm setup of our hot-wall reactor VP2000HW by AIXTRON used for device production since 2001.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
89-94
DOI
10.4028/www.scientific.net/MSF.645-648.89
Citation
C. Hecht, R. A. Stein, B. Thomas, L. Wehrhahn-Kilian, J. Rosberg, H. Kitahata, F. Wischmeyer, "High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor", Materials Science Forum, Vols. 645-648, pp. 89-94, 2010
Online since
April 2010
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$32.00
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