High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 89-94 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.89 |
| Citation | Christian Hecht et al., 2010, Materials Science Forum, 645-648, 89 |
| Online since | April, 2010 |
| Authors | Christian Hecht, René A. Stein, Bernd Thomas, Larissa Wehrhahn-Kilian, Jonas Rosberg, Hiroya Kitahata, Frank Wischmeyer |
| Keywords | Chemical Vapor Deposition (CVD), Epitaxial Growth, Planetary Reactor |
| Abstract | In this paper, we present first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from AIXTRON with a capability of processing 10x100mm wafers per run. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 10x100mm runs will be shown and compared to results of the 6x100mm setup of our hot-wall reactor VP2000HW by AIXTRON used for device production since 2001. |
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