Paper Title:
Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height
  Abstract

It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC SBD. Furthermore, b of metal/4H-SiC SBD varies with annealing temperature. We fabricate 0.231mm2 SBD with Ti/SiC interface using Si-face and C-face 4H-SiC. These SBDs are annealed at several temperatures after a formation of the Ti/SiC interface. As a result, b of Ti/C-face 4H-SiC interface annealed at 400 oC is nearly equal to b of Ti/Si-face 4H-SiC interface annealed at 500 oC and the n-values of these SBDs are nearly equal to the ideal value (unity). Using that annealing condition, we fabricated 25mm2 junction barrier Schottky (JBS) diodes with Ti/SiC interface on Si-face and C-face 4H-SiC epitaxial substrate. b of Si-face and C-face JBS diodes are 1.26eV and 1.24eV, respectively. The leakage currents for both Si-face and C-face JBS diodes are less than 1mA/cm2. The current of 100A is obtained at the forward bias voltage of 1.95V and 2.16V for the Si-face JBS and the C-face JBS.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
893-896
DOI
10.4028/www.scientific.net/MSF.645-648.893
Citation
A. Kinoshita, T. Ohyanagi, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai, "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height", Materials Science Forum, Vols. 645-648, pp. 893-896, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Akimasa Kinoshita, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated....
643
Authors: Yong Hong Tao, Song Bai, Run Hua Huang, Gang Chen, Ling Wang, Ao Liu, Yun Li, Zhi Fei Zhao
Chapter 4: Electronics and Microelectronics, Embedded and Integrated Systems, Communications, Power and Energy, Electric and Magnetic Systems
Abstract:3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV...
1023
Authors: Ki Hyun Kim, Ye Hwan Kang, Jung Hun Lee, Eun Sik Jung, In Ho Kang, Chang Heon Yang
4.1 Diodes (SBDs, JBS, PiN, ...)
Abstract:In this paper, to verify implant effect characteristics variation by stripe type, grid type and circle type, the P+ implant patterning was...
733