Paper Title:
4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers
  Abstract

4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩcm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient temperatures up to 200 °C.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
897-900
DOI
10.4028/www.scientific.net/MSF.645-648.897
Citation
K. Vassilevski, I. P. Nikitina, A. B. Horsfall, N. G. Wright, C. M. Johnson, "4.6 kV, 10.5 mOhm×cm2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers ", Materials Science Forum, Vols. 645-648, pp. 897-900, 2010
Online since
April 2010
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Price
$32.00
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