Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 9-12 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.9 |
| Citation | Masashi Nakabayashi et al., 2010, Materials Science Forum, 645-648, 9 |
| Online since | April, 2010 |
| Authors | Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, S. Satoh, Hirokatsu Yashiro, Taizo Hoshino, Hosei Hirano, Wataru Ohashi |
| Keywords | A-Face, Large Area Substrates, Photoluminescence (PL), Stacking Fault |
| Abstract | In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and structural analyses using HRTEM clarified that the SF-like structures were comprised of 6H (3, 3) stacking sequences. The stacking sequences of the SF-like structures observed are different from the SFs formed in the a-face grown crystals, suggesting that it is due to 6H nucleation on {0001} plane terraces. |
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