Paper Title:
Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
  Abstract

In-grown type stacking faults (SFs) like structures were observed in 100mm diameter 4H-SiC crystals by Photoluminescence (PL) mappings, and structural analyses using HRTEM clarified that the SF-like structures were comprised of 6H (3, 3) stacking sequences. The stacking sequences of the SF-like structures observed are different from the SFs formed in the a-face grown crystals, suggesting that it is due to 6H nucleation on {0001} plane terraces.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
9-12
DOI
10.4028/www.scientific.net/MSF.645-648.9
Citation
M. Nakabayashi, T. Fujimoto, M. Katsuno, H. Tsuge, T. Aigo, S. Satoh, H. Yashiro, T. Hoshino, H. Hirano, W. Ohashi, "Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality ", Materials Science Forum, Vols. 645-648, pp. 9-12, 2010
Online since
April 2010
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Price
$32.00
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