Paper Title:
6.5 kV SiC PiN Diodes with Improved Forward Characteristics
  Abstract

The paper compares static and dynamic characteristics of 6.5 kV SiC PiN diodes fabricated with different p-emitters. The version with the thickest p-emitter (4 µm) showed the lowest forward voltage (3.4 V at 100 A/cm²) and the lowest (negative) temperature coefficient. Forward voltage DC stress tests revealed a stability within the measurement error of the test apparatus (<50 mV). The dynamic performance showed a soft recovery even at 4 kV. The reverse recovery charge Qrr is analyzed for different forward currents and junction temperatures. The dynamic losses of the SiC PiN diode are marginal with view to the application in industrial inverters.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
901-904
DOI
10.4028/www.scientific.net/MSF.645-648.901
Citation
D. Peters, W. Bartsch, B. Thomas, R. Sommer, "6.5 kV SiC PiN Diodes with Improved Forward Characteristics", Materials Science Forum, Vols. 645-648, pp. 901-904, 2010
Online since
April 2010
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Price
$32.00
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