Paper Title:
Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
  Abstract

Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of 20 m shows breakdown voltage of 3.3 kV and forward voltage drop as low as 3.13 V at 100A/cm2. Variation of calculated forward voltage drop ( ) from measured carrier lifetimes is very comparable to measured of fully processed PiN diodes. Measured carrier lifetime and of PiN diodes also show good spatial correlation. Wafer level lifetime mapping can be employed to assess and predict of PiN diodes.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
905-908
DOI
10.4028/www.scientific.net/MSF.645-648.905
Citation
G. Y. Chung, M. J. Loboda, S. G. Sundaresan, R. Singh, "Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes ", Materials Science Forum, Vols. 645-648, pp. 905-908, 2010
Online since
April 2010
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