Paper Title:
Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance
  Abstract

In this work we discuss measurements of the breakdown voltage of diodes with non-punch-through (NPT)- and punch-through (PT)-designs. From the experimental results we deduce the temperature dependent Fulop constants of the effective ionization rate. The data of this work agree very well with ionization rates for electrons and holes determined recently.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
909-912
DOI
10.4028/www.scientific.net/MSF.645-648.909
Citation
W. Bartsch, R. Schörner, K. O. Dohnke, "Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance ", Materials Science Forum, Vols. 645-648, pp. 909-912, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Christian Hecht, Bernd Thomas, Wolfgang Bartsch
Abstract:This work presents results on the growth of thick epitaxial layers on 4° off-oriented 4HSiC in a commercially available hot-wall CVD system....
239
Authors: Wolfgang Bartsch, Heinz Mitlehner, S. Gediga
Abstract:In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut...
889
Authors: Gontran Pâques, Sigo Scharnholz, Jens Peter Konrath, Nicolas Dheilly, Dominique Planson, Rik W. De Doncker
Abstract:With the aim of investigating the specific process parameters of bipolar semiconductor devices, simple mesa-terminated silicon carbide PiN...
473
Authors: Duy Minh Nguyen, Gontran Pâques, Nicolas Dheilly, Christophe Raynaud, Dominique Tournier, Jens Peter Konrath, Sigo Scharnholz, Dominique Planson
Abstract:Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to...
567
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969