Paper Title:
Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
  Abstract

The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose on reverse leakage currents. Only in the highest dose with the Al concentration of 2x1020cm-3, more than 90% of the devices showed high leakage currents above 10-4A at the maximum electric field of 3MV/cm. In such devices, almost all of the emissive spots corresponded to threading screw dislocations (TSDs) by the analysis of emission microscopy and X-ray topography. These TSDs were defined as killer defects with the estimated density of 500cm-2 in the case of the highest dose. The emissions were supposed to be due to microplasmas, since the spectra of the emissions were different from those of heat radiation. Condensation of Al atoms, nitrogen atoms and DI defects were excluded as the origin of the emissions by secondary ion mass spectrometry and low temperature photoluminescence analyses.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
913-916
DOI
10.4028/www.scientific.net/MSF.645-648.913
Citation
T. Tsuji, T. Tawara, R. Tanuma, Y. Yonezawa, N. Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, H. Matsuhata, K. Fukuda, H. Okumura, K. Arai, "Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations", Materials Science Forum, Vols. 645-648, pp. 913-916, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shuji Katakami, Hiroyuki Fujisawa, Kensuke Takenaka, Hitoshi Ishimori, Shinji Takasu, Mitsuo Okamoto, Manabu Arai, Yoshiyuki Yonezawa, Kenji Fukuda
Chapter 10: Device and Application
Abstract:We fabricated and characterized an ultrahigh voltage (>10kV) p-channel silicon carbide insulated gate bipolar transistor (SiC-IGBT) with high...
958
Authors: Kumiko Konishi, Norifumi Kameshiro, Natsuki Yokoyama, Akio Shima, Yasuhiro Shimamoto
Chapter IV: SiC Devices and Circuits
Abstract:We fabricated trench Junction Barrier Schottky (JBS) diodes, and investigated the effect on the reduction of leakage current and the device...
596