Paper Title:
Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
  Abstract

The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
921-924
DOI
10.4028/www.scientific.net/MSF.645-648.921
Citation
N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, S. Nozaki, "Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation ", Materials Science Forum, Vols. 645-648, pp. 921-924, 2010
Online since
April 2010
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$32.00
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