Paper Title:
Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 921-924 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.921 |
| Citation | Naoya Iwamoto et al., 2010, Materials Science Forum, 645-648, 921 |
| Online since | April, 2010 |
| Authors | Naoya Iwamoto, Shinobu Onoda, Takeshi Ohshima, Kazutoshi Kojima, Atsushi Koizumi, Kazuo Uchida, Shinji Nozaki |
| Keywords | Bipolar Diode, Charge Collection Efficiency, Electron Irradiation, Particle Detector |
| Price | US$ 28,- |
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Abstract
The effect of electron irradiation on the charge collection efficiency of a 6H-SiC p+n diode has been studied. The diodes were irradiated with electrons of energies from 100 keV to 1 MeV. The charge collection efficiencies of the samples were measured for alpha particles before and after the electron irradiation. The electron irradiation at 100 keV does not affect the charge collection efficiency, while the electron irradiation at 200 keV or higher decreases the charge collection efficiency. The degree of the degradation of the diodes correlates with the energy of the electron irradiation.
