Paper Title:
Radiation Hardness Evaluation of SiC-BGSIT
  Abstract

In this study, we evaluated the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching devices up to the absorbed dose of 10 MGy(SiO2). The on-voltage Von of Si-IGBT degraded excessively at the early stage of the irradiation (>~0.1 MGy(SiO2)) due to the bulk damage produced by Compton electrons like the gain degradation in Si bipolar transistors. The threshold voltage Vth of Si-MOSFET was very sensitive against the radiation due to the competing mechanism between the generation of the hole traps in the gate SiO2 and the SiO2/Si interface states. Moreover, the breakdown voltage VBR and leak current Ileak of MOSFET degraded significantly against the absorbed dose. While, the electrical properties of SiC-BGSIT was very stable even after the irradiation of 10 MGy(SiO2).

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
941-944
DOI
10.4028/www.scientific.net/MSF.645-648.941
Citation
Y. Tanaka, S. Onoda, A. Takatsuka, T. Ohshima, T. Yatsuo, "Radiation Hardness Evaluation of SiC-BGSIT", Materials Science Forum, Vols. 645-648, pp. 941-944, 2010
Online since
April 2010
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$32.00
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