Paper Title:
Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
  Abstract

In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET transistor at temperatures up to 525 °C and built a Spice model based on the characterization data. The temperature effects were also formulized in this Spice model to ensure its uniform applicability over the entire temperature range. Test circuits of a differential amplifier and a multivibrator were built and tested from room temperature up to 450 °C to validate the proposed SiC JFET model, which could be widely applied in Spice based circuit simulation packages.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
949-952
DOI
10.4028/www.scientific.net/MSF.645-648.949
Citation
J. Yang, J. Fraley, B. Western, M. Schupbach, A. B. Lostetter, "Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design ", Materials Science Forum, Vols. 645-648, pp. 949-952, 2010
Online since
April 2010
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Price
$32.00
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