Paper Title:
Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor
  Abstract

This paper presents a study on a SiC JFET leg of a 3-leg Voltage Source Inverter (VSI). The switching curves obtained with the JFET working in free wheeling mode are shown to point out drain-to-gate interaction effects. Indeed, during the drain-source voltage variations, the JFET gate-source voltage can have considerable variations, because of the electrical coupling induced by the gate-drain capacitance Cgd. When the gate-source voltage variation becomes too negative, there is a risk of occurrence of the phenomenon of punch-through in the gate-source junction. Conversely, when it is enough positive, the JFET may conduct and lead to a leg short-circuit. To decrease these undesired effects for the JFET legs and consequently for the SiC JFET inverter, an external gate-source capacitor is used. This solution is studied and optimized by simulation on an inverter leg.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
957-960
DOI
10.4028/www.scientific.net/MSF.645-648.957
Citation
O. Berry, Y. Hamieh, S. Raël, F. Meibody-Tabar, S. Vieillard, D. Bergogne, H. Morel, "Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor", Materials Science Forum, Vols. 645-648, pp. 957-960, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Dynefors, V. Desmaris, Joakim Eriksson, Per Åke Nilsson, Niklas Rorsman, Herbert Zirath
1125
Authors: X. Zhang, Seo Young Ha, M. Benamara, Marek Skowronski, Joseph J. Sumakeris, Sei Hyung Ryu, Michael J. Paisley, Michael J. O'Loughlin
Abstract:Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional...
327
Authors: Xiao Ning Zhang, Qing Wang
Abstract:This paper presents a simulation method on shielding effectiveness(SE). The method is completely general and able to optimize shielding...
1613
Authors: Chang Long Liu, Da Pei Tang
Abstract:Thermal residual stress in diamond film deposited onto Mo substrate was simulated and analyzed comprehensively by using the finite element...
1199
Authors: Ying Wu, Xu Zhou
Chapter 5: Dynamics of Mechanical System
Abstract:For being convenient for researching the dynamic characteristic and the improvement and use of the planar six bar mechanism, for improving...
921