We present physics based models for the occupation of interface traps and the mobility of the transition layer found in 4H-SiC MOSFETs and extract values for the same using combined numerical simulation and experimental characterization. The Si-C-O transition layer found in 4H-SiC MOS devices is electrically modeled as having a doping dependent mobility that is different from the regular bulk 4H-SiC bulk mobility. Compared to the high intrinsic bulk mobility of 4H-SiC, the transition layer intrinsic mobility was extracted to be approximately 165cm2/Vs. The occurrence of the excessive high density of interface traps near the conduction band edge led us to develop a new model for the occupation of traps lying inside the conduction band itself. Due to the conduction band trap densities being comparable to the conduction band electron states, a non-zero probability exists for their occupation, which causes the occupied trap densities to be very high in strong inversion. Detailed numerical simulations and corroboration with experiment have been performed to calibrate the models and extract physical parameter values.