Paper Title:
Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
  Abstract

We present physics based models for the occupation of interface traps and the mobility of the transition layer found in 4H-SiC MOSFETs and extract values for the same using combined numerical simulation and experimental characterization. The Si-C-O transition layer found in 4H-SiC MOS devices is electrically modeled as having a doping dependent mobility that is different from the regular bulk 4H-SiC bulk mobility. Compared to the high intrinsic bulk mobility of 4H-SiC, the transition layer intrinsic mobility was extracted to be approximately 165cm2/Vs. The occurrence of the excessive high density of interface traps near the conduction band edge led us to develop a new model for the occupation of traps lying inside the conduction band itself. Due to the conduction band trap densities being comparable to the conduction band electron states, a non-zero probability exists for their occupation, which causes the occupied trap densities to be very high in strong inversion. Detailed numerical simulations and corroboration with experiment have been performed to calibrate the models and extract physical parameter values.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
975-978
DOI
10.4028/www.scientific.net/MSF.645-648.975
Citation
S. Potbhare, A. Akturk, N. Goldsman, A. J. Lelis, S. Dhar, A. K. Agarwal, "Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs ", Materials Science Forum, Vols. 645-648, pp. 975-978, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto, Atsumi Miyashita, Masahito Yoshikawa
Abstract:First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been...
573
Authors: Carey M. Tanner, Jong Woo Choi, Jane P. Chang
Abstract:The electronic properties of HfO2 films on 4H-SiC were investigated to determine their suitability as high-κ dielectrics in SiC power MOS...
1071
Authors: Rui Qing Xu, Lan Fang Yao, Lin Li, Shuo Wang, Lin Lin Tian, Xue Ling Fang
Abstract:First-principles calculations using the plane-wave pseudo-potential (PWPP) method based on the density functional theory (DFT) is employed to...
1385
Authors: Faiz Salleh, Hiroya Ikeda
Abstract:We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and...
197
Authors: Takuji Hosoi, Takashi Kirino, Atthawut Chanthaphan, Yusuke Uenishi, Daisuke Ikeguchi, Akitaka Yoshigoe, Yuden Teraoka, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Takayoshi Shimura, Heiji Watanabe
Chapter 5: Processing of SiC
Abstract:The change in energy band alignment of thermally grown SiO2/4H-SiC(0001) structures due to an interface defect passivation treatment was...
721