Paper Title:
Wafer-Level Hall Measurement on SiC MOSFET
  Abstract

Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
979-982
DOI
10.4028/www.scientific.net/MSF.645-648.979
Citation
L. C. Yu, K. P. Cheung, V. Tilak, G. Dunne, K. Matocha, J. P. Campbell, J. S. Suehle, K. Sheng, "Wafer-Level Hall Measurement on SiC MOSFET", Materials Science Forum, Vols. 645-648, pp. 979-982, 2010
Online since
April 2010
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Price
$32.00
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