Paper Title:
Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
  Abstract

We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the subthreshold region. An increased stretch-out and negative shift can give rise to increased leakage current in the OFF-state if proper precautions are not met to provide a proper margin for the threshold voltage. State-of-the-art 50-A MOSFETs exhibit less instability than previous 20-A devices, and devices that run hotter show a larger degradation.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
983-986
DOI
10.4028/www.scientific.net/MSF.645-648.983
Citation
A. J. Lelis, R. Green, D. B. Habersat, N. Goldsman, "Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics ", Materials Science Forum, Vols. 645-648, pp. 983-986, 2010
Online since
April 2010
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$32.00
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