Paper Title:
Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics
  Abstract

We investigated the impact of a combination treatment of nitrogen plasma exposure and forming gas annealing (FGA) for a thermally grown SiO2 layer on channel electron mobility in 4H-SiC metal-insulator-semiconductor field-effect-transistors (MISFETs) with and without deposited aluminum oxynitride (AlON) overlayers. This treatment was effective for improving the interface properties of nitrided SiO2/SiC structures formed by thermal oxidation in NOx ambient as well as pure SiO2/SiC structures. A channel mobility enhancement was perfectly consistent with a reduction in interface state density depending on the process conditions of the combination treatment, and a peak mobility of 26.9 cm2/Vs was achieved for the MISFETs with the nitrided SiO2 single dielectric layer. Comparable channel mobility was obtained with a gate insulator consisting of the AlON stacked on a thin nitrided SiO2 interlayer, indicating that both the combination treatment and the AlON/SiO2 stacked dielectrics can be integrated into the SiC MISFET fabrication processes.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
991-994
DOI
10.4028/www.scientific.net/MSF.645-648.991
Citation
T. Hosoi, Y. Kagei, T. Kirino, Y. Watanabe, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, H. Watanabe, "Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO2 Stacked Gate Dielectrics ", Materials Science Forum, Vols. 645-648, pp. 991-994, 2010
Online since
April 2010
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$32.00
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