Paper Title:
Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
  Abstract

UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle of the wafer on the MOS properties are investigated. The channel resistance, gate I-V curves and instability of threshold voltage are superior on the {11-20} planes as compared with other planes. On the vicinal off wafer, influence of the off-angle disappears and the properties on the equivalent planes are almost the same. The obtained results indicate that the extremely low on-resistance with the high stability and high reliability is possible in the SiC UMOSFET by the hexagonal cell composed of the six {11-20} planes on the vicinal off wafer, and actually an extremely low channel resistance was demonstrated on the hexagonal UMOSFET with the six {11-20} planes on the vicinal off wafer.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
999-1004
DOI
10.4028/www.scientific.net/MSF.645-648.999
Citation
S. Harada, S. Ito, M. Kato, A. Takatsuka, K. Kojima, K. Fukuda, H. Okumura, "Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle ", Materials Science Forum, Vols. 645-648, pp. 999-1004, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: H. Nakao, Hideno Mikami, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
1293
Authors: Kenji Fukuda, Makoto Kato, Shinsuke Harada, Kazutoshi Kojima
Abstract:SiC power MOSFETs are expected to be normally-off type fast switching devices. The on-resistance of SiC power MOSFETs is much higher than...
1043
Authors: Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto
Abstract:In this study, we have investigated N2O oxidation of various off-angled 4H-SiC (0001) epilayers and characterized the properties of MOS...
659
Authors: Hiroshi Yano, H. Nakao, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki
807
Authors: Kenji Fukuda, Shinsuke Harada, Junji Senzaki, Mitsuo Okamoto, Yasunori Tanaka, Akimasa Kinoshita, Ryouji Kosugi, Kazu Kojima, Makoto Kato, Atsushi Shimozato, Kenji Suzuki, Yusuke Hayashi, Kazuto Takao, Tomohisa Kato, Shin Ichi Nishizawa, Tsutomu Yatsuo, Hajime Okumura, Hiromichi Ohashi, Kazuo Arai
Abstract:The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth...
907