Paper Title
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Authors: Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Tsunenobu Kimoto, Takeshi Ohshima, Gerhard Pensl, Adam Gali
Abstract:In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm-2 electron beams...
411
Authors: Jian Wu Sun, Georgios Zoulis, Jean Lorenzzi, Nikoletta Jegenyes, Sandrine Juillaguet, Hervé Peyre, Veronique Soulière, Gabriel Ferro, Frédéric Milesi, Jean Camassel
Abstract:Ga-doped 3C-SiC layers have been grown on on-axis 6H-SiC (0001) substrates by the VLS technique and investigated by low temperature...
415
Authors: Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Katsunori Danno, Giovanni Alfieri, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Sergey A. Reshanov, Svetlana Beljakowa, Bernd Zippelius, Gerhard Pensl
Abstract:In this paper we describe an effort to find correlations between low temperature photoluminescence spectroscopy (LTPL) and deep level...
419
Authors: Sergey A. Reshanov, Svetlana Beljakowa, Bernd Zippelius, Gerhard Pensl, Katsunori Danno, Giovanni Alfieri, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:This paper comprises a systematic study of the thermal stability of defect centers observed in n- and p-type 4H-SiC by deep level transient...
423
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Lars S. Løvlie, Lasse Vines, Bengt G. Svensson
Abstract:4H-SiC has been irradiated with 10 keV protons and a laterally resolved DLTS study performed to study the diffusion of irradiation induced...
431
Authors: Franziska Christine Beyer, Carl G. Hemmingsson, Henrik Pedersen, Anne Henry, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Erik Janzén
Abstract:After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DLTS peak amplitudes of the defects Z1/2 and EH6/7, which were already...
435
Authors: Michael Weidner, Lia Trapaidze, Gerhard Pensl, Sergey A. Reshanov, Adolf Schöner, Hisayoshi Itoh, Takeshi Ohshima, Tsunenobu Kimoto
Abstract:Intrinsic defects in 3C-SiC are generated by implantation of H+- and He+-ions or irra¬diation with high energy electrons. The defect...
439
Authors: Georgios Manolis, Georgios Zoulis, Sandrine Juillaguet, Jean Lorenzzi, Gabriel Ferro, Jean Camassel, Kęstutis Jarašiūnas
Abstract:Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL)...
443
Authors: Robert P. Devaty, Maynard J. Clouter, Yue Ke, Wolfgang J. Choyke
Abstract:We report measured and calculated frequencies of elastic waves propagating in columnar porous 4H-SiC, an analytically tractable system. The...
447
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