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Authors: Masashi Kato, H. Ono, Masaya Ichimura
Abstract:We performed electrochemical deposition of ZnO on the surfaces of 4H-SiC epilayers and characterized Ni Schottky diodes fabricated on the...
669
Authors: Jochen Hilsenbeck, Michael Treu, Roland Rupp, Kathrin Rüschenschmidt, Ronny Kern, Matthias Holz
Abstract:In this paper we describe how a merged pn Schottky diode (MPS diode) is capable to drive surge current levels far beyond the normal current...
673
Authors: Jens Eriksson, Ming Hung Weng, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Stefano Leone, Vito Raineri
Abstract:The electrical characteristics of Au/3C-SiC Schottky diodes were studied and related to crystal defects. A structural analysis performed by...
677
Authors: Michael Grieb, Masato Noborio, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Tsunenobu Kimoto, Heiner Ryssel
Abstract:The electrical characteristics and the reliability of different oxides on the 4H-SiC Si-face for gate oxide application in MOS devices are...
681
Authors: Junji Senzaki, Takuma Suzuki, Atsushi Shimozato, Kenji Fukuda, Kazuo Arai, Hajime Okumura
Abstract:The effect of ammonia (NH3) post-oxidation annealing (POA) technique on the reliability of thermal oxides grown on a n-type 4H-SiC (0001)...
685
Authors: Fernanda Chiarello Stedile, Silma Alberton Corrêa, Cláudio Radtke, Leonardo Miotti, Israel J.R. Baumvol, Gabriel V. Soares, Fred Kong, Ji Sheng Han, Leonie Hold, Sima Dimitrijev
Abstract:The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was...
689
Authors: John Rozen, Xing Guang Zhu, Ayayi Claude Ahyi, John R. Williams, Leonard C. Feldman
Abstract:We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with...
693
Authors: Thanos Tsirimpis, Michael Krieger, Heiko B. Weber, Gerhard Pensl
Abstract:Boron (B) ions were implanted into 4H-SiC. In order to avoid the out-diffusion of B ions during the subsequent annealing process, two...
697
Authors: Margareta K. Linnarsson, Aurégane Audren, Anders Hallén
Abstract:Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type...
701
Authors: Tomokatsu Watanabe, Sunao Aya, Ryo Hattori, Masayuki Imaizumi, Tatsuo Oomori
Abstract:Effects of implantation temperature on electrical properties of heavily-Al-doped 4H-SiC layer formed with Al implantation have been...
705
Showing 161 to 170 of 300 Paper Titles