Paper Title
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Authors: Nicolas Heuck, F. Baars, Andrey Bakin, A. Waag
Abstract:In this paper a wire-bond technology for high temperatures (up to 500°C) based on silver-wire is presented. The mechanical properties of...
749
Authors: Marcin Zielinski, Catherine Moisson, Sylvain Monnoye, Hugues Mank, Thierry Chassagne, Sebastien Roy, Anne Elisabeth Bazin, Jean François Michaud, Marc Portail
Abstract:In this contribution we recapitulate the state of the art of silicon carbide and related materials polishing. Since the demonstration (by...
753
Authors: Koutarou Kawahara, Giovanni Alfieri, Michael Krieger, Tsunenobu Kimoto
Abstract:In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of...
759
Authors: Tomohisa Kato, Akimasa Kinoshita, Keisuke Wada, Takashi Nishi, Eiji Hozomi, Hiroyoshi Taniguchi, Kenji Fukuda, Hajime Okumura
Abstract:In this paper, we report a new polishing technique regarding the elimination of step bunching on the silicon carbide (SiC) surface. The step...
763
Authors: Sergey P. Lebedev, P.A. Dement’ev, Alexander A. Lebedev, V.N. Petrov, Alexander N. Titkov
Abstract:Atomic-force microscopy and scanning tunnel electron microscopy have been used to study the surface of single-crystal 6H-SiC (0001)...
767
Authors: Tomoaki Hatayama, Hidenori Koketsu, Hiroshi Yano, Takashi Fuyuki
Abstract:Thermal etching of hexagonal (4H-, 6H-, 8H- and 10H-), rhombohedral (15R- and 21R-), and cubic (3C-) SiC Si-faces was performed between 900...
771
Authors: Takeshi Okamoto, Yasuhisa Sano, Hideyuki Hara, Tomoaki Hatayama, Kenta Arima, Keita Yagi, Junji Murata, Shun Sadakuni, K. Tachibana, Y. Shirasawa, Hidekazu Mimura, Takashi Fuyuki, Kazuto Yamauchi
Abstract:Flat and well-ordered surfaces of silicon carbide (SiC) substrates are important for electronic devices. Furthermore, researchers have...
775
Authors: Hidenori Koketsu, Tomoaki Hatayama, K. Amijima, Hiroshi Yano, Takashi Fuyuki
Abstract:.   Crystallographically specific pyramidal planes in 4H-SiC could be naturally formed at mesa sidewalls by a thermal etching at 900oC in a...
779
Authors: Tatsunori Sugimoto, Masataka Satoh, Tohru Nakamura, K. Mashimo, Hiroshi Doi, Masami Shibagaki
Abstract:The impact of CF4 plasma treatment on the surface roughening of SiC has been investigated for N ion implanted SiC(0001) which is implanted...
783
Authors: Hitoshi Habuka, Keiko Tanaka, Yusuke Katsumi, Naoto Takechi, Katsuya Fukae, Tomohisa Kato
Abstract:The morphology of a single-crystalline 4H-silicon carbide (SiC) substrate surface after etching by chlorine trifluoride (ClF3) gas was...
787
Showing 181 to 190 of 300 Paper Titles