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Silicon Carbide and Related Materials 2009

Materials Science Forum Volumes 645 - 648

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• p1187 Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates   [ 1 M ]
  Authors: Gholam Reza Yazdi, Konstantin Vassilevski, José M. Córdoba, Daniela Gogova, Irina P. Nikitina, Mikael Syväjärvi, Magnus Odén, Nicolas G. Wright, Rositza Yakimova
• p1191 Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates   [ 509 K ]
  Authors: Ghassan Younes, Gabriel Ferro, Maher Soueidan, Arnaud Brioude, François Cauwet
• p1195 Deep-Level Defects in AlN Single Crystals: EPR Studies   [ 2 M ]
  Authors: Ivan V. Ilyin, Alexandra A. Soltamova, V.A. Soltamov, V.A. Khramtsov, E.N. Mokhov, P.G. Baranov
• p1199 Quality Control and Electrical Properties of Thin Amorphous (SiC)_1-x(AlN)_x Films Produced by Radio Frequency Dual Magnetron Sputtering   [ 320 K ]
  Authors: G. Gálvez de la Puente, Oliver Erlenbach, Jorge Andres Guerra, T. Hupfer, M. Steidl, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker
• p1203 Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC   [ 135 K ]
  Authors: Sergey Y. Davydov, Alexander A. Lebedev
• p1207 2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility   [ 174 K ]
  Authors: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millán, Phillippe Godignon
• p1211 Evolution of the Electrical Behaviour of GaN and AlGaN Materials after High Temperature Annealing and Thermal Oxidation   [ 267 K ]
  Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Salvatore Di Franco, Corrado Bongiorno, Valeria Puglisi, Vito Raineri
• p1215 Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al_0.2Ga_0.8N Accumulation-Mode FET Devices   [ 544 K ]
  Authors: Marko J. Tadjer, Karl D. Hobart, Michael A. Mastro, Travis J. Anderson, Eugene A. Imhoff, Fritz J. Kub, Jennifer K. Hite, Charles R. Eddy
• p1219 2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates   [ 444 K ]
  Authors: Katja Tonisch, Wael Jatal, Ralf Granzner, Mario Kittler, Uwe Baumann, Frank Schwierz, Jörg Pezoldt
• p1223 Energy Optimization of As+ Ion Implantation on SiO₂ Passivation Layer of AlGaN/GaN HEMTs   [ 245 K ]
  Authors: Ji Yong Lim, Young Hwan Choi, Young Shil Kim, Min Ki Kim, Min Koo Han
• p1227 Characteristics of Diamond SBD’s Fabricated on Half Inch Size CVD Wafer Made by the “Direct Wafer Fabrication Technique”   [ 428 K ]
  Authors: Shinichi Shikata, Hitoshi Umezawa, Hideaki Yamada, T. Tsubouchi, Yoshiaki Mokuno, Akiyoshi Chayahara
• p1231 High Temperature Characteristics of Diamond SBDs   [ 169 K ]
  Authors: Hitoshi Umezawa, Kazuhiro Ikeda, Ramanujam Kumaresan, Shinichi Shikata
• p1235 Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires   [ 241 K ]
  Authors: Konstantinos Rogdakis, Edwige Bano, Laurent Montes, M. Bechelany, David Cornu, Konstantinos Zekentes
• p1239 Nitrogen Centers in Nanodiamonds: EPR Studies   [ 933 K ]
  Authors: Alexandra A. Soltamova, P.G. Baranov, Ivan V. Ilyin, A.Y. Vul', S.V. Kidalov, F.M. Shakhov, G.V. Mamin, N.I. Silkin, S.B. Orlinskii, M.K. Salakhov
• p1243 Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices   [ 691 K ]
  Authors: Michael R. Jennings, Amador Pérez-Tomás, Owen J. Guy, Michal Lodzinski, Peter M. Gammon, Susan Burrows, James A. Covington, Philip A. Mawby