Paper Title
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Authors: Gwiy Sang Chung, Kyu Hyung Yoon
Abstract:This paper describes the characteristics of polycrystalline 3C-SiC micro resonators with 3 ×1017 - 1×1019 cm-3 in-situ N-doping...
873
Authors: Christian Brylinski, Olivier Ménard, Nicolas Thierry-Jebali, Frédéric Cayrel, Daniel Alquier
Abstract:The main rectifier device structures for power electronics based on SiC and on GaN are compared and the main issues for each structure are...
879
Authors: Roland Rupp, Fanny Björk, Gerald Deboy, Matthias Holz, Michael Treu, Jochen Hilsenbeck, Ralf Otremba, Hannes Zeichen
Abstract:With the help of an improved die attach the Rth,jc of SiC Schottky diodes can be reduced by 40-50% at a given chip size. This enables a...
885
Authors: Peter M. Gammon, Amador Pérez-Tomás, Michael R. Jennings, G.J. Roberts, V.A. Shah, James A. Covington, Philip A. Mawby
Abstract:SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when...
889
Authors: Akimasa Kinoshita, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:It is known that a Schottky barrier height (b) of metal/C-face 4H-SiC Schottky barrier diode (SBD) differ from b of metal/Si-face 4H-SiC...
893
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson
Abstract:4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes...
897
Authors: Dethard Peters, Wolfgang Bartsch, Bernd Thomas, R. Sommer
Abstract:The paper compares static and dynamic characteristics of 6.5 kV SiC PiN diodes fabricated with different p-emitters. The version with the...
901
Authors: Gil Yong Chung, Mark J. Loboda, Siddarth G. Sundaresan, Ranbir Singh
Abstract:Correlation between carrier lifetime and forward voltage drop in 4H-SiC PiN diodes has been investigated. PiN diodes from the drift layer of...
905
Authors: Wolfgang Bartsch, Reinhold Schörner, Karl Otto Dohnke
Abstract:In this work we discuss measurements of the breakdown voltage of diodes with non-punch-through (NPT)- and punch-through (PT)-designs. From...
909
Authors: Takashi Tsuji, T. Tawara, Ryohei Tanuma, Yoshiyuki Yonezawa, Noriyuki Iwamuro, K. Kosaka, H. Yurimoto, S. Kobayashi, Hirofumi Matsuhata, Kenji Fukuda, Hajime Okumura, Kazuo Arai
Abstract:The authors fabricated pn diodes with Al+ implantation in p-type epitaxial layers, and investigated the influence of the implantation dose on...
913
Showing 211 to 220 of 300 Paper Titles