Paper Title
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Authors: Olivier Berry, Youness Hamieh, Stéphane Raël, Farid Meibody-Tabar, Sébastien Vieillard, Dominique Bergogne, Hervé Morel
Abstract:This paper presents a study on a SiC JFET leg of a 3-leg Voltage Source Inverter (VSI). The switching curves obtained with the JFET working...
957
Authors: Jang Kwon Lim, Mietek Bakowski, Hans Peter Nee
Abstract:The 1.2 kV 4H-SiC buried-grid vertical JFET structures with Normally-on (N-on) and Normally-off (N-off) design were investigated by...
961
Authors: Georg Tolstoy, Dimosthenis Peftitsis, Jang Kwon Lim, Mietek Bakowski, Hans Peter Nee
Abstract:The main problem when the conventional PSpice JFET model is used to simulate a vertical short-channel buried-grid JFET is caused by the...
965
Authors: Sei Hyung Ryu, Brett A. Hull, Sarit Dhar, L. Cheng, Qing Chun Jon Zhang, Jim Richmond, Mrinal K. Das, Anant K. Agarwal, John W. Palmour, Aivars J. Lelis, Bruce Geil, Charles Scozzie
Abstract:In this paper, we review the performance, reliability, and robustness of the current 4H-SiC power DMOSFETs. Due to advances in device and...
969
Authors: Siddharth Potbhare, Akin Akturk, Neil Goldsman, Aivars J. Lelis, Sarit Dhar, Anant K. Agarwal
Abstract:We present physics based models for the occupation of interface traps and the mobility of the transition layer found in 4H-SiC MOSFETs and...
975
Authors: Liang Chun Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Abstract:Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for...
979
Authors: Aivars J. Lelis, Ronald Green, Daniel B. Habersat, Neil Goldsman
Abstract:We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the...
983
Authors: Hiroshi Kono, Takuma Suzuki, Makoto Mizukami, Chiharu Ota, Shinsuke Harada, Junji Senzaki, Kenji Fukuda, Takashi Shinohe
Abstract:Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon...
987
Authors: Takuji Hosoi, Yusuke Kagei, Takashi Kirino, Yuu Watanabe, Kohei Kozono, Shuhei Mitani, Yuki Nakano, Takashi Nakamura, Heiji Watanabe
Abstract:We investigated the impact of a combination treatment of nitrogen plasma exposure and forming gas annealing (FGA) for a thermally grown SiO2...
991
Authors: Mitsuo Okamoto, Miwako Iijima, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura
Abstract:We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The channel...
995
Showing 231 to 240 of 300 Paper Titles