Paper Title
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Authors: Shinsuke Harada, Sachiko Ito, Makoto Kato, Akio Takatsuka, Kazutoshi Kojima, Kenji Fukuda, Hajime Okumura
Abstract:UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the...
999
Authors: Vinayak Tilak, Kevin Matocha, Greg Dunne
Abstract:nversion layers of 4H and 6H Silicon carbide based MOS devices are characterized by Gated Hall measurements to determine the trap density...
1005
Authors: Takafumi Tanehira, T. Nakano, Motoi Nakao
Abstract:Metal oxide semiconductor field effect transistors (MOSFETs) using SiC on insulator (SiC-OI) substrate with the structure of 3C-SiC...
1009
Authors: Kin Kiong Lee, Jamie Steward Laird, Takeshi Ohshima, Shinobu Onoda, Toshio Hirao, Hisayoshi Itoh
Abstract:This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to...
1013
Authors: Anant K. Agarwal, Qing Chun Jon Zhang, Robert Callanan, Craig Capell, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Victor Temple, Robert E. Stahlbush, Joshua D. Caldwell, Heather O'Brian, Charles Scozzie
Abstract:In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates...
1017
Authors: Siddarth G. Sundaresan, H. Issa, Deepak Veeredy, Ranbir Singh
Abstract:This study is focused on the design and fabrication of large-area (4.1x4.1 mm2 and 8.2x8.2 mm2), 8.1 kV 4H-SiC GTO Thyristors. The anode and...
1021
Authors: Qing Chun Jon Zhang, Robert Callanan, Anant K. Agarwal, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Charles Scozzie
Abstract:4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first...
1025
Authors: Hiroki Miyake, Tsunenobu Kimoto, Jun Suda
Abstract:In this study, new SiC-based heterojunction bipolar transistors (HBT) are proposed. An n-type AlN/GaN short-period superlattice (quasi-AlGaN)...
1029
Authors: Martin Domeij, Carina Zaring, Andrei O. Konstantinov, Muhammad Nawaz, Jan Olov Svedberg, Krister Gumaelius, Imre Keri, Anders Lindgren, Bo Hammarlund, Mikael Östling, Mats Reimark
Abstract:This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown...
1033
Authors: Luca Farese, Bengt Gunnar Malm, Martin Domeij, Mikael Östling
Abstract:SiC power bipolar junction transistors (BJTs), for high voltage applications, have been studied under elevated temperature and electrical...
1037
Showing 241 to 250 of 300 Paper Titles