Paper Title
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Authors: Hidekazu Tsuchida, Masahiko Ito, Isaho Kamata, Masahiro Nagano, Tetsuya Miyazawa, Notihiro Hoshino
Abstract:Fast and thick 4H-SiC epitaxial growth is demonstrated in a vertical-type reactor under a low system pressure within the range 13-40 mbar. A...
77
Authors: Jawad ul Hassan, Peder Bergman, Justinas Palisaitis, Anne Henry, Patrick J. McNally, S. Anderson, Erik Janzén
Abstract:Homoepitaxial growth has been performed on 3” Si-face on-axis 4H–SiC substrates using standard gas system in a horizontal Hot-wall chemical...
83
Authors: Christian Hecht, René A. Stein, Bernd Thomas, Larissa Wehrhahn-Kilian, Jonas Rosberg, Hiroya Kitahata, Frank Wischmeyer
Abstract:In this paper, we present first results of epitaxial layer deposition using a novel warm-wall CVD multi-wafer system AIX 2800G4 WW from...
89
Authors: Anne Henry, Stefano Leone, Sven Andersson, Olof Kordina, Erik Janzén
Abstract:A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures...
95
Authors: Kazutoshi Kojima, Sachiko Ito, Junji Senzaki, Hajime Okumura
Abstract:We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the...
99
Authors: Siva Prasad Kotamraju, Bharat Krishnan, Yaroslav Koshka
Abstract:Thick 4H-SiC epitaxial layers have been grown using a combination of two chlorinated precursors silicon tetrachloride (SiCl4) and...
103
Authors: Stefano Leone, Anne Henry, Olof Kordina, Erik Janzén
Abstract:Chloride-based growth on on-axis SiC substrates has been studied at higher temperature than typical CVD conditions. The use of chlorinated...
107
Authors: Siva Prasad Kotamraju, Bharat Krishnan, Galyna Melnychuk, Yaroslav Koshka
Abstract:Chlorinated silicon precursor SiCl4 was investigated as an alternative to SiH4 with HCl addition as a source of additional chlorine in order...
111
Authors: Kenji Momose, Michiya Odawara, Yutaka Tajima, Hiroo Koizumi, Daisuke Muto, Takayuki Sato
Abstract:We developed a production technology for epitaxial growth with a smooth surface morphology for 4º off Si-face 4H-SiC epitaxial layers on 100...
115
Authors: Takashi Aigo, Hiroshi Tsuge, Hirokatsu Yashiro, Tatsuo Fujimoto, Masakazu Katsuno, Masashi Nakabayashi, Taizo Hoshino, Wataru Ohashi
Abstract:The epitaxial growth process was optimized in order to obtain good surface morphology for epilayers grown on 4˚ off-axis substrates. The...
119
Showing 21 to 30 of 300 Paper Titles