HOME CONTACT My eBook

Username: Password:

> @scientific.net

Silicon Carbide and Related Materials 2009

Materials Science Forum Volumes 645 - 648

• Papers
• Abstracts
• buy eBook

• p247 Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration   [ 271 K ]
  Authors: Tsubasa Matsumoto, Shinichi Nishizawa, Satoshi Yamasaki
• p251 Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction   [ 771 K ]
  Authors: Kinga Kościewicz, Wlodek Strupiński, Wojciech Wierzchowski, Krzysztof Wieteska, Andrzej Roman Olszyna
• p255 Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios   [ 213 K ]
  Authors: Nicolò Piluso, Andrea Severino, Massimo Camarda, Ruggero Anzalone, Andrea Canino, Giuseppe Condorelli, Giuseppe Abbondanza, Francesco La Via
• p259 Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures   [ 171 K ]
  Authors: Alexander A. Lebedev, Pavel L. Abramov, Elena V. Bogdanova, Sergey Y. Davydov, Sergey P. Lebedev, Dmitrii K. Nelson, Gagik A. Oganesyan, Boris S. Razbirin, Alla S. Tregubova
• p263 Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x(AlN)_x Films   [ 182 K ]
  Authors: Jorge Andres Guerra, Anja Winterstein, Oliver Erlenbach, Gonzalo Gálvez, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker
• p267 Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio   [ 183 K ]
  Authors: Jan M. Knaup, Han Li, Joost J. Vlassak, Efthimios Kaxiras
• p271 A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy   [ 1 M ]
  Authors: Robert E. Stahlbush, Rachael L. Myers-Ward, Brenda L. VanMil, D. Kurt Gaskill, Charles R. Eddy
• p277 On the Luminescence and Driving Force of Stacking Faults in 4H-SiC   [ 483 K ]
  Authors: Joshua D. Caldwell, A.J. Giles, Robert E. Stahlbush, M.G. Ancona, Orest J. Glembocki, Karl D. Hobart, Brett A. Hull, Kendrick X. Liu
• p283 Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure   [ 641 K ]
  Authors: Massimo Camarda, Pietro Delugas, Andrea Canino, Andrea Severino, Nicolò Piluso, Antonino La Magna, Francesco La Via
• p287 In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate   [ 616 K ]
  Authors: Gan Feng, Jun Suda, Tsunenobu Kimoto
• p291 Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density   [ 5 M ]
  Authors: Michael Dudley, Ning Zhang, Yu Zhang, Balaji Raghothamachar, Shayan Byrappa, Gloria Choi, Edward K. Sanchez, Darren M. Hansen, Roman Drachev, Mark J. Loboda
• p295 Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy   [ 1 M ]
  Authors: Michael Dudley, Ning Zhang, Yu Zhang, Balaji Raghothamachar, Edward K. Sanchez
• p299 Dislocation Conversion and Propagation during Homoepitaxial Growth of 4H-SiC   [ 179 K ]
  Authors: Birgit Kallinger, Bernd Thomas, Sebastian Polster, Patrick Berwian, Jochen Friedrich
• p303 Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers   [ 1 M ]
  Authors: Isaho Kamata, Masahiro Nagano, Hidekazu Tsuchida
• p307 Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers   [ 4 M ]
  Authors: Jawad Hassan, Anne Henry, J. Peber Bergman