Paper Title
Authors: Yoshinori Matsushita, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Abstract:We measured the excess carrier lifetimes in as-grown and electron irradiated p-type 4H-SiC epitaxial layers with the microwave...
Authors: Serguei I. Maximenko, Jaime A. Freitas, Yoosuf N. Picard, Paul B. Klein, Rachael L. Myers-Ward, Kok Keong Lew, Peter G. Muzykov, D. Kurt Gaskill, Charles R. Eddy, Tangali S. Sudarshan
Abstract:The effect of various types of in-grown stacking faults and threading screw/edge type dislocations on carrier lifetime and diffusion lengths...
Authors: Kęstutis Jarašiūnas, Patrik Ščajev, Vytautas Gudelis, Paul B. Klein, Masashi Kato
Abstract:We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals...
Authors: Arunas Kadys, Patrik Ščajev, Georgios Manolis, Vytautas Gudelis, Kęstutis Jarašiūnas, Pavel L. Abramov, Sergey P. Lebedev, Alexander A. Lebedev
Abstract:Photoelectric properties of 3C sublimation-grown epitaxial layers with different structural quality were studied by using time-resolved...
Authors: Thomas L. Straubinger, Richard L. Woodin, T. Witt, J. Shovlin, Gary M. Dolny, P. Sasahara, Erwin Schmitt, Arnd Dietrich Weber, Jeff B. Casady, Janna R. B. Casady
Abstract:We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The...
Authors: Marco Naretto, Denis Perrone, Sergio Ferrero, Luciano Scaltrito
Abstract:In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power...
Authors: Vytautas Grivickas, K. Gulbinas, Paulius Grivickas, Georgios Manolis, Jan Linnros
Abstract:An alternative approach based on non-equilibrium free-carrier density measurements was used to characterize the fundamental absorption edge...
Authors: Takuro Tomita, M. Iwami, M. Yamamoto, M. Deki, Shigeki Matsuo, Shuichi Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, Shinobu Onoda, Takeshi Ohshima
Abstract:Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier...
Authors: Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama
Abstract:Boron diffusion in boron-doped poly-Si/nitrogen-doped 4H-SiC structure was investigated by combining a reported model of poly-Si diffusion...
Showing 51 to 60 of 300 Paper Titles