Paper Title:
The "EÖTVÖS” Program in Space Research – 1979-1986
  Abstract

A brief historical overview of one of Hungary's space projects on Soviet spacecrafts, the so-called "Eötvös" Project on semiconductor crystal growth, is given. Three experiments were proposed and performed: i) epitaxial growth of GaAs under flux, ii) seedless growth of GaSb, and as a control, iii) seeded growth of an InSb crystal. Because of thermal control problems of the furnace, only the growth of a structurally perfect GaSb bicrystal was a successful novelty. Results of structural and electrical analyses are briefly summarized. Finally, a list of related publications is given.

  Info
Periodical
Edited by
A. Roósz, V. Mertinger, P. Barkóczy and Cs. Hoó
Pages
11-16
DOI
10.4028/www.scientific.net/MSF.649.11
Citation
J. Gyulai , I. Gyúró, "The "EÖTVÖS” Program in Space Research – 1979-1986", Materials Science Forum, Vol. 649, pp. 11-16, 2010
Online since
May 2010
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Price
$32.00
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