A brief historical overview of one of Hungary's space projects on Soviet spacecrafts, the so-called "Eötvös" Project on semiconductor crystal growth, is given. Three experiments were proposed and performed: i) epitaxial growth of GaAs under flux, ii) seedless growth of GaSb, and as a control, iii) seeded growth of an InSb crystal. Because of thermal control problems of the furnace, only the growth of a structurally perfect GaSb bicrystal was a successful novelty. Results of structural and electrical analyses are briefly summarized. Finally, a list of related publications is given.