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Shallow Impurities in Semiconductors IV

Volumes 65 - 66
doi: 10.4028/www.scientific.net/MSF.65-66
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Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors

Authors: J. Wagner

1

Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs

Authors: T. Iino

11

Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs

Authors: T.D. Harris, J.K. Trautman, J.I. Colonell

21

A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing

Authors: Wan Quan Shi, Qing Run Hou, Shi Xiang Liu, Xue Jun Liu, Zheng Qing Fu, Zhi Jing He, L.W. Lu

29

Control of Shallow Boron Profile in Silicon

Authors: Zhi Heng Lu, Su Jie Li, Yan Luo

35

Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio

Authors: A.F. Polupanov, V.I. Galiev, V.E. Zhuravlev

41

Electron-Hole Mechanism of Migration and Defect Interaction

Authors: A.B. Gerasimov

47

Delta-Doping in III-V Semiconductors

Authors: E.F. Schubert, R.F. Kopf

53

Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples

Authors: A.A. Bernussi, J.A. Brum, P. Motisuke, P. Basmaji, M. Siu Li, O. Hipólito

67

Photoluminescence and Excitation Study of Delta Doped GaAs

Authors: J.C.M. Henning, Y.A.R.R. Kessner, Paul M. Koenraad, M.R. Leys, A.P.J. Voncken, W.C. van der Vleuten, J.H. Wolter

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