Paper Title:
Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 65-66)
Edited by
Gordon Davies
Pages
141-150
DOI
10.4028/www.scientific.net/MSF.65-66.141
Citation
M. Stavola, S. J. Pearton, "Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors", Materials Science Forum, Vols. 65-66, pp. 141-150, 1991
Online since
January 1991
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Price
$32.00
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