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Magneto-Transport in Stressed Si:B in the Localization Regime

Journal Materials Science Forum (Volumes 65 - 66)
Volume Shallow Impurities in Semiconductors IV
Edited by Gordon Davies
Pages 241-246
DOI 10.4028/www.scientific.net/MSF.65-66.241
Citation M. Stöhr et al., 1991, Materials Science Forum, 65-66, 241
Authors M. Stöhr, P. Janiszewski, J.A. Chroboczek
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