Interaction of Phosphorus with Dislocation Cores in Silicon |
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| Journal | Materials Science Forum (Volumes 65 - 66) |
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| Volume | Shallow Impurities in Semiconductors IV |
| Edited by | Gordon Davies |
| Pages | 265-270 |
| DOI | 10.4028/www.scientific.net/MSF.65-66.265 |
| Citation | M.I. Heggie et al., 1991, Materials Science Forum, 65-66, 265 |
| Authors | M.I. Heggie, R. Jones, A. Umerski |
| Full Paper | 
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