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Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (δ) Doped III-V Semiconductors, p.1
Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs, p.11
Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs, p.21
A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing, p.29
Control of Shallow Boron Profile in Silicon, p.35
Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio, p.41
Electron-Hole Mechanism of Migration and Defect Interaction, p.47
Delta-Doping in III-V Semiconductors, p.53
Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples, p.67

Home > Materials Science Forum > Shallow Impurities in Semiconductors IV > Control of Shallow Boron Profile in Silicon

Paper Title:

Control of Shallow Boron Profile in Silicon

Periodical	Materials Science Forum (Volumes 65 - 66)
Main Theme	Shallow Impurities in Semiconductors IV
Edited by	Gordon Davies
Pages	35-40
DOI	10.4028/www.scientific.net/MSF.65-66.35
Citation	Zhi Heng Lu et al., 1991, Materials Science Forum, 65-66, 35
Authors	Zhi Heng Lu, Su Jie Li, Yan Luo
Price	US$ 28,-

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