Paper Title:
Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 65-66)
Edited by
Gordon Davies
Pages
357-362
DOI
10.4028/www.scientific.net/MSF.65-66.357
Citation
P.E. Dyshlovenko, A.A. Kopylov, K.L. Lutovich, V.A. Vasilijev, A.A. Shakmaev, "Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus", Materials Science Forum, Vols. 65-66, pp. 357-362, 1991
Online since
January 1991
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.