Electron-Hole Mechanism of Migration and Defect Interaction |
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| Journal | Materials Science Forum (Volumes 65 - 66) |
|---|---|
| Volume | Shallow Impurities in Semiconductors IV |
| Edited by | Gordon Davies |
| Pages | 47-52 |
| DOI | 10.4028/www.scientific.net/MSF.65-66.47 |
| Citation | A.B. Gerasimov, 1991, Materials Science Forum, 65-66, 47 |
| Authors | A.B. Gerasimov |
| Full Paper | 
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