Paper Title:
Low Temperature Synthesis of Silicon Nanocrystals Fabricated by PECVD and their Optical Property
  Abstract

Bulk silicon is the material for microelectronics fabrication such as memory device. However, its optical properties are poor due to its indirect band gap. Since the photoluminescence from porous silicon at room temperature was first reported by Canham, silicon nanostructures have attracted considerable interest due to their potential applications in optoelectronic devices such as Si-based LEDs, solar cell. In the present study, the nanocrystalline silicons were synthesized by non-thermal plasma from gas phase. And Nitrogen plasma was applied to reduce the nonraidative recombination center which related to the emission efficiency. To confirm the effect of nitrogen plasma, the compositional, electrical and optical analysis of silicon nanocryatals layer were also investigated.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1094-1097
DOI
10.4028/www.scientific.net/MSF.654-656.1094
Citation
D.H. Jang, G. H. Gu, C. G. Park, "Low Temperature Synthesis of Silicon Nanocrystals Fabricated by PECVD and their Optical Property", Materials Science Forum, Vols. 654-656, pp. 1094-1097, 2010
Online since
June 2010
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$32.00
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