Paper Title:
Current Steps in Poly(3-Hexylthiophene)/ZnO Nanobelt Hybrid Diodes
  Abstract

We report the poly(3iophene) (P3HT)/ZnO nanobelt hybrid p-n junction diodes characterized by using a conductive atomic force microscope (C-AFM). The diodes exhibited a turn-on voltage of about 2.5 V and ideality factor of about 11.6. The obvious current steps in the I-V characteristics under the reverse bias were clearly observed at room temperature. The origin of these steps is suggested to be attributed to the charge injection-trapping induced by nanoparticles on the surface of the ZnO nanobelt.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1158-1161
DOI
10.4028/www.scientific.net/MSF.654-656.1158
Citation
W. Guo, Y. Yang, J. J. Qi, Y. Zhang, "Current Steps in Poly(3-Hexylthiophene)/ZnO Nanobelt Hybrid Diodes", Materials Science Forum, Vols. 654-656, pp. 1158-1161, 2010
Online since
June 2010
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