Paper Title:
Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length
  Abstract

We numerically evaluate the accumulation of dislocations in periodic structure of the shallow trench isolation (STI) type ULSI cells which has generally been adopted as the latest semiconductor device structure. STI type ULSI cells with gate length less than 62 nm and various trench depths are employed and subjected to a temperature drop from the initial value of 1000 °C. Dislocation accumulation is evaluated by a technique of crystal plasticity analysis. Relations between the geometry of the STI type ULSI cells and dislocation accumulation are discussed.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1682-1685
DOI
10.4028/www.scientific.net/MSF.654-656.1682
Citation
M. Sato, T. Ohashi, K. Aikawa, T. Maruizumi, I. Kitagawa, "Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length", Materials Science Forum, Vols. 654-656, pp. 1682-1685, 2010
Online since
June 2010
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