Paper Title:
Study of Deposition of Aluminum Nitride Thin Films by Hollow Cathode Electron Beam Vapor Deposition Method
  Abstract

Aluminum nitride (AlN) thin films were deposited on (100) oriented silicon wafers substrates by Hollow Cathode Electron Beam Vapor Deposition system (HCEBVD) under various Ar/N2 mass flow ratio. The films were characterized by Atomic Force Microscopy (AFM), Glancing Incident X-ray Diffraction (GIXRD) techniques and Ultraviolet/Visible Spectrophotometer (UV/VIS). It was found that the thin films are polycrystalline and have a hexagonal wurtzite structure with (002) preferred orientation, as revealed by GIXRD. AFM analysis indicates that the surface of the thin films is smooth, with average RMS (Root Mean Square) roughness Ra of 0.7nm, which is suitable for application in surface acoustic wave devices. The film thickness and optical refractory properties of the AlN thin films were investigated.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1708-1711
DOI
10.4028/www.scientific.net/MSF.654-656.1708
Citation
Z. X. Mu, X. D. Mu, C. Wang, C. Dong, "Study of Deposition of Aluminum Nitride Thin Films by Hollow Cathode Electron Beam Vapor Deposition Method", Materials Science Forum, Vols. 654-656, pp. 1708-1711, 2010
Online since
June 2010
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