Paper Title:
Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method
  Abstract

Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1716-1719
DOI
10.4028/www.scientific.net/MSF.654-656.1716
Citation
F. W. Qin, A. M. Wu, F. C. Liu, B. D. Liu, X. Jiang, "Effect of Nitridation on GaN Film Grown on Glass Substrate by ECR-PEMOCVD Method", Materials Science Forum, Vols. 654-656, pp. 1716-1719, 2010
Online since
June 2010
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