Paper Title:
Deposition of GaN Films on Freestanding CVD Thick Diamond Films
  Abstract

High quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). The high quality GaN films with small surface roughness of 8.3 nm and high c-orientation are successfully achieved at the optimized nitriding time with the diamond substrate. These properties of GaN films with small surface smoothness and high c-orientation are well used as piezoelectric films for surface acoustic wave (SAW) devices.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1740-1743
DOI
10.4028/www.scientific.net/MSF.654-656.1740
Citation
D. Zhang, Y. Z. Bai, F. W. Qin, J. M. Bian, "Deposition of GaN Films on Freestanding CVD Thick Diamond Films", Materials Science Forum, Vols. 654-656, pp. 1740-1743, 2010
Online since
June 2010
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Price
$32.00
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