A series of Ti/TiN multilayer films was deposited on Si substrates by DC reactive magnetron sputtering process. The influence of sputtering current density and substrate temperature on cycle membrane structure and its electrical properties was investigated in this study. The results show that: when the current density is 0.4A, the sheet resistance and electrical resistivity of the film are of the minimum value. The sheet resistance and electrical resistivity of the film decrease with an increase of substrate temperature. Therefore, sputtering current density should be controlled between 0.3-0.4A, while the substrate temperature should be above 400°C. For a given modulation period and modulation ratio, with the change of number of cycles the films can present a unique set of colours, and its electrical resistivity decreases with an increase in the number of cycles. When the number of cycles is greater than 4, the sheet resistance is significantly reduced, and when the number is greater than 15, the prepared films come off. To keep the number of cycles at five and change the modulation period, it is shown that a minimum electrical resistivity exists.