Paper Title:
Structural Stabilities in GaAs Nanocrystals Grown on Si (111) Surface
  Abstract

Structural stabilities in GaAs nanocrystals grown on the Si (111) substrate have been studied by transmission electron microscopy in order to see the structure and growth mechanism. The GaAs nanocrystals grown epitaxially on the Si (111) surface kept at 573 K have thin shapes consisting of a flat surface which is parallel to the Si (111) surface. The crystalline structure of the initial growth layer, below approximately 5 nm in thickness is zincblend, but with increasing thickness the structure changes to the wurtzite structure by formation of orderly-arranged stacking faults. The small difference in the driving force between wurtzite and the zincblende structure could lead to a situation where the kinetic rate of nucleus formation is higher for the wurtzite structure than for the zincblende structure. It would highly increase the probability that the wurtzite structure is formed as a non-equilibrium state.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1772-1775
DOI
10.4028/www.scientific.net/MSF.654-656.1772
Citation
H. Yasuda, K. Matsumoto, T. Furukawa, M. Imamura, N. Nitta, H. Mori, "Structural Stabilities in GaAs Nanocrystals Grown on Si (111) Surface", Materials Science Forum, Vols. 654-656, pp. 1772-1775, 2010
Online since
June 2010
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$32.00
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