Paper Title:
Synthetic Properties of the c-Axis Tilted AlN Thin Films
  Abstract

Aluminum nitride (AlN) is one of the most popular piezoelectric materials for high frequency resonators, filters and sensors. The piezoelectric property, i.e. electromechanical coupling coefficient, of AlN thin film is highly related to its crystalline orientation. AlN thin films with various c-axis-tilted angles can be fabricated by the RF sputtering technique. The crystallization and grain growth orientations of AlN thin film are examined by XRD, SEM, and TEM, while the bonding condition and nano-mechanical properties are investigated by a raman system and a nano-indentation technique.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1780-1783
DOI
10.4028/www.scientific.net/MSF.654-656.1780
Citation
C. J. Chung, C. L. Wei, P. T. Hsieh, C. Y. Huang, J. F. Lin, Y. C. Chen, C. C. Cheng, "Synthetic Properties of the c-Axis Tilted AlN Thin Films", Materials Science Forum, Vols. 654-656, pp. 1780-1783, 2010
Online since
June 2010
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$32.00
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