Paper Title:
Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices
  Abstract

We have investigated the growth and characteristics of heteroepitaxial Ge1-xSnx layers on various substrates. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing the precipitation of Sn atoms from Ge1-xSnx layers. We succeeded in growing strain-relaxed Ge1-xSnx layers with a Sn content over 9% by controlling the dislocation structure on Si substrates. We also characterized the Hall mobility of Ge1-xSnx layers and found that the incorporation of Sn into Ge effectively reduced the concentration of holes related with vacancy defects, and improved on the hole mobility.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
1788-1791
DOI
10.4028/www.scientific.net/MSF.654-656.1788
Citation
O. Nakatsuka, Y. Shimura, S. Takeuchi, N. Tsutsui, S. Zaima, "Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices", Materials Science Forum, Vols. 654-656, pp. 1788-1791, 2010
Online since
June 2010
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