Paper Title:
The Fluctuation of Indium Composition in InGaN Based LED Investigated by Atom Probe Tomography (APT)
  Abstract

In the present study, the relationship between the fluctuation of indium (In) composition and wavelength change involved in internal quantum efficiency of InGaN based LEDs has been investigated. The In composition of commercial InGaN based LEDs with and without annealing at 900 oC has been analyzed by using atom probe tomography (APT). The results revealed that the decrease in In composition caused by annealing at 900 oC for 30 min. exhibited the wavelength change (approximately 6.13 nm blueshift) in the photoluminescence (PL). Wavelength change in the PL of InGaN based LEDs will be discussed in terms of the composition and distribution of In in InGaN/GaN.

  Info
Periodical
Materials Science Forum (Volumes 654-656)
Main Theme
Edited by
Jian-Feng Nie and Allan Morton
Pages
2370-2373
DOI
10.4028/www.scientific.net/MSF.654-656.2370
Citation
B. H. Kim, G. H. Gu, C. G. Park, "The Fluctuation of Indium Composition in InGaN Based LED Investigated by Atom Probe Tomography (APT)", Materials Science Forum, Vols. 654-656, pp. 2370-2373, 2010
Online since
June 2010
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