Improvement of Oxidation Resistance of SiC/C (Graphite) Composites by Silicon Infiltration in Surface

SiC/C (graphite) composite ceramics with 20vol% flake graphite were fabricated by Plasma Activated Sintering (PAS) firstly; the composites treated by silicon infiltration in surface were oxidized from 800oC to 1500oC. Effect of silicon infiltration on the oxidation resistance of SiC/C (graphite) composites was characterized by TG/DTA, SEM and XRD. The results show that the graphite in surface of composites reacted with silicon to form a dense SiC film about 30μm-in-thickness. The oxidation resistance temperature was increased from 600oC to 1300oC. Below 1300oC, the surface of composites by silicon filtration was oxidized to form a dense continuous oxide film to hider the oxidation of graphite in matrix. At 1500oC, the surface oxide film was heavy damaged, and many micropores were produced; inner graphite was oxidized above 1300oC again.