Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature |
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| Journal | Materials Science Forum (Volumes 663 - 665) |
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| Volume | Optoelectronic Materials |
| Edited by | Yuan Ming Huang |
| Pages | 1041-1044 |
| DOI | 10.4028/www.scientific.net/MSF.663-665.1041 |
| Citation | Han Fa Liu et al., 2010, Materials Science Forum, 663-665, 1041 |
| Online since | November, 2010 |
| Authors | Han Fa Liu, Hua Fu Zhang |
| Keywords | Bias Voltage, Magnetron Sputtering, TGZO Film, Transparent Conducting Films |
| Abstract | Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm. |
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