Paper Title:
Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature
  Abstract

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
1041-1044
DOI
10.4028/www.scientific.net/MSF.663-665.1041
Citation
H. F. Liu, H. F. Zhang, "Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature", Materials Science Forum, Vols. 663-665, pp. 1041-1044, 2011
Online since
November 2010
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$32.00
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