Paper Title:
Properties of ZnO/Diamond Film Heterojunction
  Abstract

High quality boron-doped p-type freestanding diamond (FSD) films with smooth nucleation surface were prepared by hot filament chemical vapor deposition (HFCVD) method. The effects of B/C ratios on the electrical properties of FSD films were investigated by Hall effect measurement system. N-type Al-doped ZnO films were prepared on p-type FSD films by radio-frequency (RF) magnetron sputtering method to fabricate heterojunction. The I-V characteristic of the heterojunction was examined. The results showed a rectifying behavior of this structure.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
1209-1212
DOI
10.4028/www.scientific.net/MSF.663-665.1209
Citation
F. Y. Xia, L. J. Wang, J. Huang, K. Tang, J. J. Zhang, W. M. Shi, "Properties of ZnO/Diamond Film Heterojunction", Materials Science Forum, Vols. 663-665, pp. 1209-1212, 2011
Online since
November 2010
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Price
$32.00
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