Paper Title:
Effects of Heat Treatment on Growth of BaSi2 Film on Si(111) Substrates
  Abstract

Semiconducting orthorhombic BaSi2 films were synthesized on Si(111) substrates using magnetron sputtering (MS) and subsequent annealing by interdiffusion between the deposited Ba film and Si(111) substrate. The structural and morphological features of the result films are analysed. The growth mechanism and the evolution of the silicides are discussed. The effects of annealing temperature and annealing time on the growth of the BaSi2 film are studied.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
1273-1276
DOI
10.4028/www.scientific.net/MSF.663-665.1273
Citation
Z. Y. Yang, Z. T. Hao, Q. Xie, "Effects of Heat Treatment on Growth of BaSi2 Film on Si(111) Substrates", Materials Science Forum, Vols. 663-665, pp. 1273-1276, 2011
Online since
November 2010
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