Paper Title:
Effect of Heat Treatment on Structural and Optoelectronic Properties of GaN Epilayers
  Abstract

GaN epilayers were grown on sapphire by metal-organic chemical vapor deposition (MOCVD), and the samples were annealed with rapid thermal processor (RTP) at 650, 750, 850 and 950oC, respectively. The effect of heat treatment on structural and optoelectronic properties of GaN epilayers was investigated. X-ray diffraction (XRD) analysis shows that the full width at half maximum (FWHM) of the rocking curves becomes smaller as the annealing temperature increases. Photoluminescence (PL) spectra at room temperature demonstrate that the yellow band decreases with the increase of annealing temperature. Hall-effect measurements reveal that carrier concentration of the GaN epilayers raise with the increase of annealing temperature. The results suggest that the structural and optoelectronic properties of GaN epilayers could be significantly improved by heat treatment.

  Info
Periodical
Materials Science Forum (Volumes 663-665)
Edited by
Yuan Ming Huang
Pages
1314-1317
DOI
10.4028/www.scientific.net/MSF.663-665.1314
Citation
J. P. Mei, X. J. Xie, Q. Y. Hao, X. Liu, J. J. Xu, C. C. Liu, "Effect of Heat Treatment on Structural and Optoelectronic Properties of GaN Epilayers", Materials Science Forum, Vols. 663-665, pp. 1314-1317, 2011
Online since
November 2010
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$32.00
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